RJK0636JPD datasheet(2/7 Pages) RENESAS

Part #	RJK0636JPD

Description	Silicon N Channel Power MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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RJK0636JPD

Preliminary

R07DS0365EJ0100 Rev.1.00

Page 2 of 6

Aug 24, 2011

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Gate to source leak current

IGSS

—

10

A

VGS = 20 V, VDS = 0

Zero gate voltage drain current

IDSS

—

1

A

VDS = 60 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.0

—

2.0

V

ID = 1 mA, VDS = 10 V

Note5

RDS(on)

—

18

22

m



ID = 13 A, VGS = 10 V

Note5

Static drain to source on state

resistance

RDS(on)

—

25

34

m



ID = 13 A, VGS = 10 V

Note5

Input capacitance

Ciss

—

750

—

pF

Output capacitance

Coss

—

210

—

pF

Reverse transfer capacitance

Crss

—

150

—

pF

VDS = 10 V, VGS = 0,

f = 1 MHz

Total gate charge

Qg

—

18

—

nC

Gate to source charge

Qgs

—

2.5

—

nC

Gate to drain charge

Qgd

—

5.5

—

nC

VDD = 25 V, VGS = 10 V,

ID = 25 A

Turn-on delay time

td(on)

—

10

—

ns

Rise time

tr

—

13

—

ns

Turn-off delay time

td(off)

—

50

—

ns

Fall time

tf

—

13

—

ns

ID = 13 A, RL = 2.3 ,

VGS = 10 V, Rg = 4.7 

Body–drain diode forward voltage

VDF

—

0.93

—

V

IF = 25 A, VGS = 0

Note5

Body–drain diode reverse recovery

time

trr

—

40

—

ns

IF = 25 A, VGS = 0

diF/ dt = 100 A/ s

Notes: 5. Pulse test

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