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RJK0215DPA Datasheet(PDF) 9 Page - Renesas Technology Corp

Part # RJK0215DPA
Description  Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK0215DPA Datasheet(HTML) 9 Page - Renesas Technology Corp

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RJK0215DPA
Preliminary
R07DS0207EJ0110 Rev.1.10
Page 9 of 10
Sep 05, 2011
D. U. T
Rg
50
Ω
IAP
Monitor
VDS
Monitor
VDD
Vin
15 V
0
ID
VDS
IAP
V(BR)DSS
L
VDD
EAR =
L
• I
AP
2
•
2
1
VDSS
VDSS – VDD
Vin Monitor
D.U.T.
Vin
10 V
RL
VDS
= 10 V
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
90%
10%
tf
Rg
3
1
0.3
0.1
0.03
0.01
1 m
10 m
100 m
1
10
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Avalanche Test Circuit
Avalanche Waveform
Switching Time Test Circuit
Switching Time Waveform
10
μ
100
μ
DM
P
PW
T
D =
PW
T
θch − c(t) = γs (t) • θch − c
θch − c = 5.0°C/W, Tc = 25°C


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