CFY25-23 datasheet(1/6 Pages) SIEMENS

Part #	CFY25-23

Description	GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

1

GaAs FET

CFY 25

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Maximum Ratings

Type

Ordering Code

(tape and reel)

Marking

Package1)

Pin Configuration

CFY 25-17

CFY 25-20

CFY 25-23

Q62703-F106

Q62703-F107

Q62703-F108

C 5

C 6

C 7

Micro-X

1

2

3

D

S

G

4

S

Parameter

Symbol

Values

Unit

Drain-source voltage

VDS

5V

Drain current

ID

80

mA

Gate-source voltage

VGS

– 5 … + 0

Channel temperature

Tch

150

˚C

Total power dissipation, TS

≤ 56 ˚C2)

Ptot

250

mW

Storage temperature range

Tstg

– 65 … + 150

Thermal Resistance

Channel - soldering point2)

Rth chS

375

K/W

Drain-gate voltage

VDG

7

1)

For detailed information see chapter Package Outlines.

2)

TS is measured on the source lead at the soldering point to the pcb.

q

Low noise

q

High gain

q

For front-end amplifiers

q

lon-implanted planar structure

q

All gold metallization

07.94

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CFY25-23 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

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