Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

RJF0604JPD Datasheet(PDF) 1 Page - Renesas Technology Corp

Part # RJF0604JPD
Description  Silicon N Channel MOS FET Series Power Switching
Download  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJF0604JPD Datasheet(HTML) 1 Page - Renesas Technology Corp

  RJF0604JPD Datasheet HTML 1Page - Renesas Technology Corp RJF0604JPD Datasheet HTML 2Page - Renesas Technology Corp RJF0604JPD Datasheet HTML 3Page - Renesas Technology Corp RJF0604JPD Datasheet HTML 4Page - Renesas Technology Corp  
Zoom Inzoom in Zoom Outzoom out
 1 / 4 page
background image
R07DS0583EJ0100 Rev.1.00
Page 1 of 3
Nov 22, 2011
Target Specifications Datasheet
RJF0604JPD
Silicon N Channel MOS FET Series
Power Switching
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
 Logic level operation (5 V Gate drive).
 Built-in the over temperature shut-down circuit.
 High endurance capability against to the short circuit.
 Latch type shut down operation (need 0 voltage recovery).
 Built-in the current limitation circuit.
 Power supply voltage applies 12 V and 24 V.
 AEC-Q101 Compliant
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
1
2
3
4
D
S
G
Gate Resistor
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
Current
Limitation
Circuit
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
16
V
Gate to source voltage
VGSS
–2.5
V
Drain current
ID
Note3
5
A
Body-drain diode reverse drain current
IDR
5
A
Avalanche current
IAP
Note 2
(4.7)
A
Avalanche energy
EAR
Note 2
(94.7)
mJ
Channel dissipation
Pch
Note 1
30
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
–55 to +150
C
Notes: 1. Value at Tc = 25
C
2. Tch = 25
C, Rg  50 
3. It provides by the current limitation lower bound value.
R07DS0583EJ0100
Rev.1.00
Nov 22, 2011


Similar Part No. - RJF0604JPD

ManufacturerPart #DatasheetDescription
logo
Renesas Technology Corp
RJF0604JPD RENESAS-RJF0604JPD Datasheet
94Kb / 8P
   Silicon N Channel MOS FET Series Power Switching
RJF0604JPD-00-J3 RENESAS-RJF0604JPD-00-J3 Datasheet
94Kb / 8P
   Silicon N Channel MOS FET Series Power Switching
RJF0604JPD RENESAS-RJF0604JPD_12 Datasheet
94Kb / 8P
   Silicon N Channel MOS FET Series Power Switching
RJF0604JPD RENESAS-RJF0604JPD_15 Datasheet
105Kb / 8P
   60V, 5A Silicon N Channel Thermal FET Power Switching
More results

Similar Description - RJF0604JPD

ManufacturerPart #DatasheetDescription
logo
Renesas Technology Corp
RJF0610JSP RENESAS-RJF0610JSP_15 Datasheet
104Kb / 8P
   Silicon N Channel MOS FET Series Power Switching
RJF0610JSP RENESAS-RJF0610JSP Datasheet
104Kb / 8P
   Silicon N Channel MOS FET Series Power Switching
RJF0611JPD RENESAS-RJF0611JPD_15 Datasheet
95Kb / 8P
   Silicon N Channel MOS FET Series Power Switching
logo
Hitachi Semiconductor
HAF2011 HITACHI-HAF2011 Datasheet
34Kb / 6P
   Silicon N Channel MOS FET Series Power Switching
logo
Renesas Technology Corp
RJF0605DPD RENESAS-RJF0605DPD Datasheet
95Kb / 8P
   Silicon N Channel MOS FET Series Power Switching
RJF0611DPE RENESAS-RJF0611DPE Datasheet
95Kb / 8P
   Silicon N Channel MOS FET Series Power Switching
RJF0605JPD RENESAS-RJF0605JPD Datasheet
63Kb / 4P
   Silicon N Channel MOS FET Series Power Switching
RJF0606JPE RENESAS-RJF0606JPE Datasheet
63Kb / 4P
   Silicon N Channel MOS FET Series Power Switching
RJF0610DSP RENESAS-RJF0610DSP_15 Datasheet
104Kb / 8P
   Silicon N Channel MOS FET Series Power Switching
RJF0605DPD RENESAS-RJF0605DPD_15 Datasheet
95Kb / 8P
   Silicon N Channel MOS FET Series Power Switching
logo
Hitachi Semiconductor
HAF2001 HITACHI-HAF2001 Datasheet
54Kb / 10P
   Silicon N Channel MOS FET Series Power Switching
More results


Html Pages

1 2 3 4


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com