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CFY30 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. CFY30
Description  GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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CFY30 Datasheet(HTML) 1 Page - Siemens Semiconductor Group

   
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GaAs FET
CFY 30
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 1/6
11.01.1996
HL EH PD 21
D a t a s h e e t
* Low noise ( F
min = 1.4 dB @ 4 GHz )
* High gain ( 11.5 dB typ. @ 4 GHz )
* For oscillators up to 12 GHz
* For amplifiers up to 6 GHz
* Ion implanted planar structure
* Chip all gold metallization
* Chip nitride passivation
ESD:
Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(tape and reel)
Pin Configuration
1
2
3
4
Package 1)
CFY 30
A2
Q62703-F97
S
D
S
G
SOT-143
Maximum ratings
Symbol
Value
Unit
Drain-source voltage
VDS
5V
Drain-gate voltage
VDG
7V
Gate-source voltage
VGS
-4 ... +0.5
V
Drain current
ID
80
mA
Channel temperature
TCh
150
°C
Storage temperature range
Tstg
-40...+150
°C
Total power dissipation (TS < 70°C) 2)
Ptot
250
mW
Thermal resistance
Channel-soldering point 2)
RthChS
<320
K/W
1) Dimensions see chapter Package Outlines
2) T
S is measured on the source 1 lead at the soldering point to the PCB.


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