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NP180N04TUJ-E1-AY Datasheet(PDF) 1 Page - Renesas Technology Corp |
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NP180N04TUJ-E1-AY Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 8 page R07DS0180EJ0100 Rev.1.00 Page 1 of 6 Dec 17, 2010 Preliminary Data Sheet NP180N04TUJ MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V) • Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. LEAD PLATING PACKING Package NP180N04TUJ -E1-AY ∗ 1 TO-263-7pin, Taping (E1 type) NP180N04TUJ -E2-AY ∗ 1 Pure Sn (Tin) Tape 800 p/reel TO-263-7pin, Taping (E2 type) Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Absolute Maximum Ratings (TA = 25 °C) Item Symbol Ratings Unit Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25 °C) ID(DC) ±180 A Drain Current (pulse) ∗ 1 ID(pulse) ±720 A Total Power Dissipation (TC = 25 °C) PT1 348 W Total Power Dissipation (TA = 25 °C) ∗ 2 PT2 1.8 W Channel Temperature Tch 175 °C Storage Temperature Tstg −55 to +175 °C Repetitive Avalanche Current ∗ 3 IAR 72 A Repetitive Avalanche Energy ∗ 3 EAR 518 mJ Thermal Resistance Channel to Case Thermal Resistance Rth(ch-C) 0.43 °C/W Channel to Ambient Thermal Resistance ∗ 2 Rth(ch-A) 83.3 °C/W Notes: ∗1. TC = 25 °C, PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt ∗3. Tch(peak) ≤ 150°C, RG = 25 Ω R07DS0180EJ0100 Rev.1.00 Dec 17, 2010 |
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