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NP89N055PUK-E1-AY Datasheet(PDF) 6 Page - Renesas Technology Corp |
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NP89N055PUK-E1-AY Datasheet(HTML) 6 Page - Renesas Technology Corp |
6 / 8 page NP89N055PUK R07DS0569EJ0100 Rev.1.00 Page 6 of 6 Nov 17, 2011 Package Drawing (Unit: mm) TO-263 (MP-25ZP) (Mass: 1.5 g TYP.) No plating 7.88 MIN. 2.54 0.75 ±0.2 0.5 2 13 4 4.45 ±0.2 1.3 ±0.2 0.6 ±0.2 0 to 8° 1. Gate 2. Drain 3. Source 4. Fin (Drain) 0.025 to 0.25 0.25 10.0 ±0.3 Equivalent Circuit Source Body Diode Gate Drain Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. |
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