Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

NP40N10VDF-E2-AY Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # NP40N10VDF-E2-AY
Description  MOS FIELD EFFECT TRANSISTOR
Download  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NP40N10VDF-E2-AY Datasheet(HTML) 3 Page - Renesas Technology Corp

  NP40N10VDF-E2-AY Datasheet HTML 1Page - Renesas Technology Corp NP40N10VDF-E2-AY Datasheet HTML 2Page - Renesas Technology Corp NP40N10VDF-E2-AY Datasheet HTML 3Page - Renesas Technology Corp NP40N10VDF-E2-AY Datasheet HTML 4Page - Renesas Technology Corp NP40N10VDF-E2-AY Datasheet HTML 5Page - Renesas Technology Corp NP40N10VDF-E2-AY Datasheet HTML 6Page - Renesas Technology Corp NP40N10VDF-E2-AY Datasheet HTML 7Page - Renesas Technology Corp NP40N10VDF-E2-AY Datasheet HTML 8Page - Renesas Technology Corp NP40N10VDF-E2-AY Datasheet HTML 9Page - Renesas Technology Corp Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 11 page
background image
NP40N10YDF, NP40N10VDF, NP40N10PDF
Chapter Title
R07DS0361EJ0100 Rev.1.00
Page 3 of 9
Jun 07, 2011
Electrical Characteristics (TA = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Zero Gate Voltage Drain Current
IDSS
1
μA
VDS = 100 V, VGS = 0 V
Gate Leakage Current
IGSS
±100
nA
VGS =
±20 V, VDS = 0 V
Gate to Source Threshold Voltage
VGS(th)
1.5
2.0
2.5
V
VDS = VGS, ID = 250
μ A
Forward Transfer Admittance
1
| yfs |
20
40
S
VDS = 5.0 V, ID = 20 A
RDS(on)1
21
25
m
Ω
VGS = 10 V, ID = 20 A
RDS(on)2
23
30
m
Ω
VGS = 5.0 V, ID = 20 A
NP40N10YDF
RDS(on)3
24
36
m
Ω
VGS = 4.5 V, ID = 20 A
RDS(on)1
21
26
m
Ω
VGS = 10 V, ID = 20 A
RDS(on)2
23
31
m
Ω
VGS = 5.0 V, ID = 20 A
NP40N10VDF
RDS(on)3
24
37
m
Ω
VGS = 4.5 V, ID = 20 A
RDS(on)1
21
27
m
Ω
VGS = 10 V, ID = 20 A
RDS(on)2
23
32
m
Ω
VGS = 5.0 V, ID = 20 A
Drain to Source
On-state
Resistance
1
NP40N10PDF
RDS(on)3
24
38
m
Ω
VGS = 4.5 V, ID = 20 A
Input Capacitance
Ciss
2100
3150
pF
VDS = 25 V,
Output Capacitance
Coss
200
300
pF
VGS = 0 V,
Reverse Transfer Capacitance
Crss
80
144
pF
f = 1 MHz
Turn-on Delay Time
td(on)
15
33
ns
VDD = 50 V, ID = 20 A,
Rise Time
tr
16
40
ns
VGS = 10 V,
Turn-off Delay Time
td(off)
60
120
ns
RG = 0
Ω
Fall Time
tf
5
13
ns
Total Gate Charge
QG
47
71
nC
Gate to Source Charge
QGS
8
nC
Gate to Drain Charge
QGD
12
nC
VDD = 80 V,
VGS = 10 V,
ID = 40 A
Body Diode Forward Voltage
1
VF(S-D)
0.9
1.5
V
IF = 40 A, VGS = 0 V
Reverse Recovery Time
trr
67
ns
Reverse Recovery Charge
Qrr
162
nC
IF = 40 A, VGS = 0 V,
di/dt = 100 A/
μ s
Note: 1. Pulsed test
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
0 V
PG.
RG = 25
Ω
50
Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
Ω
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
= 1 s
Duty Cycle
1%
τ
μ
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
0
90%
90%
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
10%


Similar Part No. - NP40N10VDF-E2-AY

ManufacturerPart #DatasheetDescription
logo
Renesas Technology Corp
NP40N10VDF-E2-AY RENESAS-NP40N10VDF-E2-AY Datasheet
162Kb / 11P
   100 V ??40 A ??N-channel Power MOS FET Application: Automotive
More results

Similar Description - NP40N10VDF-E2-AY

ManufacturerPart #DatasheetDescription
logo
NEC
2SK815 NEC-2SK815 Datasheet
176Kb / 4P
   MOS FIELD EFFECT TRANSISTOR
NP36P04KDG NEC-NP36P04KDG Datasheet
189Kb / 7P
   MOS FIELD EFFECT TRANSISTOR
2SJ624 NEC-2SJ624 Datasheet
71Kb / 8P
   MOS FIELD EFFECT TRANSISTOR
2SJ603 NEC-2SJ603 Datasheet
79Kb / 8P
   MOS FIELD EFFECT TRANSISTOR
logo
Renesas Technology Corp
NP180N04TUK RENESAS-NP180N04TUK_15 Datasheet
253Kb / 8P
   MOS FIELD EFFECT TRANSISTOR
2SK3353 RENESAS-2SK3353_15 Datasheet
224Kb / 10P
   MOS FIELD EFFECT TRANSISTOR
NP60N04VUK RENESAS-NP60N04VUK Datasheet
110Kb / 8P
   MOS FIELD EFFECT TRANSISTOR
NP89N055PUK RENESAS-NP89N055PUK Datasheet
112Kb / 8P
   MOS FIELD EFFECT TRANSISTOR
NP90N04VUK RENESAS-NP90N04VUK Datasheet
111Kb / 8P
   MOS FIELD EFFECT TRANSISTOR
NP160N04TUK RENESAS-NP160N04TUK Datasheet
235Kb / 8P
   MOS FIELD EFFECT TRANSISTOR
NP160N055TUK RENESAS-NP160N055TUK Datasheet
112Kb / 8P
   MOS FIELD EFFECT TRANSISTOR
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com