CR04AM-12A-BA6-B00 datasheet(2/9 Pages) RENESAS

Part #	CR04AM-12A-BA6-B00

Description	Thyristor Low Power Use

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Manufacturer	RENESAS [Renesas Technology Corp]

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CR04AM-12A

Preliminary

R07DS0636EJ0100 Rev.1.00

Page 2 of 8

Jan 16, 2012

Parameter

Symbol

Ratings

Unit

Conditions

RMS on-state current

IT(RMS)

0.63

A

Average on-state current

IT(AV)

0.4

A

Commercial frequency, sine half wave

180

 conduction, Ta=54C

Surge on-state current

ITSM

10

A

60Hz sine half wave, 1full cycle,

peak value, non-repetitive

I

2t for fusing

I

2t

0.4

A

2s

Value corresponding to 1cycle of half

wave 60Hz, surge on-state current

Peak gate power dissipation

PGM

0.5

W

Average gate power dissipation

PG(AV)

0.1

W

Peak gate forward voltage

VFGM

6

V

Peak gate reverse voltage

VRGM

6

V

Peak gate forward current

IFGM

0.3

A

Junction temperature

Tj

– 40 to +125

C

Storage temperature

Tstg

– 40 to +125

C

Mass

—

0.23

g

Typical value

Electrical Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Repetitive peak reverse current

IRRM

—

0.5

mA

Tj = 125

C, V

RRM applied

Repetitive peak off-state current

IDRM

—

0.5

mA

Tj = 125

C, V

DRM applied

RGK=1 k

On-state voltage

VTM

—

1.2

V

Tj = 25

C, I

TM = 1.2 A

instantaneous value

Gate trigger voltage

VGT

—

0.8

V

Tj = 25

C, V

D = 6 V,

IT = 0.1 A

Note3

Gate non-trigger voltage

VGD

0.2

—

V

Tj = 125

C, V

D = 1/2 VDRM

RGK=1 K

Gate trigger current

IGT

1

Note2

—

100

Note2

μA

Tj = 25

C, V

D = 6 V,

IT = 0.1 A

Note3

Holding current

IH

—

1.5

3

mA

Tj = 25°C, VD = 12 V, RGK=1 k

Thermal resistance

Rth(j-a)

—

150

C/W

Junction to ambient

Notes: 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible.

Item

A

B

C

D

E

IGT (A)

1 to 30

20 to 50

40 to 100

1 to 50

20 to 100

The above values do not include the current flowing through the 1 k

 resistance between the gate and

cathode.

3.

IGT, VGT measurement circuit.

3V

DC

IGS

IGT

6V

DC

60

Ω

VGT

2

1

TUT

1k

Ω

RGK

A3

A2

V1

A1

Switch

Switch 1 : IGT measurement

Switch 2 : VGT measurement

(Inner resistance of voltage meter is about 1k

Ω)

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