MCM4464 SERIES

3

MOTOROLA FAST SRAM

Rating

Symbol

Value

Unit

Power Supply Voltage

VCC

– 0.5 to 7.0

V

Voltage Relative to VSS

Vin, Vout

– 0.5 to VCC + 0.5

V

Output Current (per I/O)

Iout

± 30

mA

Power Dissipation

PD

10

W

Temperature Under Bias

Tbias

– 10 to + 85

°C

Operating Temperature

TA

0 to + 70

°C

Storage Temperature

Tstg

– 25 to +125

°C

NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are

exceeded. Functional operation should be restricted to RECOMMENDED OPER-

ATING CONDITIONS. Exposure to higher than recommended voltages for

extended periods of time could affect device reliability.

DC OPERATING CONDITIONS AND CHARACTERISTICS

(VCC = 5.0 V ± 10%, TA = 0 to + 70°C, Unless Otherwise Noted)

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage (Operating Voltage Range)

VCC

4.5

5.0

5.5

V

Input High Voltage

(DQ0 – 35, TDQ0 – 7, WE, A0)

(A1 – A15, OE, DCS, TCS)

VIH

2.2

2.0

—

—

VCC + 0.3 V*

VCC + 0.3 V*

V

Input Low Voltage

VIL

– 0.5

**

—

0.8

V

* VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width ≤ 20 ns)

** VIL (min) = – 3.0 V ac (pulse width ≤ 20 ns)

DC CHARACTERISTICS

Parameter

Symbol

Min

Typ

Max

Unit

Input Leakage Current (All Inputs, Vin = 0 to VCC)

Ilkg(I)





± 10

µA

Output Leakage Current (G, xCS = VIH, Vout = 0 to VCC)

Ilkg(O)





± 10

µA

AC Supply Current (G, xCS = VIL, Iout = 0 mA)

ICCA





1850

mA

Output Low Voltage (IOL = + 8 mA)

VOL





0.4

V

OUtput High Voltage (IOH = – 4.0 mA)

VOH

2.4





V

Note: Good decoupling of the local power supply should always be used.

Parameter

Symbol

Typ

Max

Unit

Input Capacitance

(A0, WE)

(A1 – A15, OE, DCS, TCS)

Cin

Cin





110

10

pF

pF

Input/Output Capacitance

Cout



10

pF

This devices on this module contain circuitry

to protect the inputs against damage due to

high static voltages or electric fields; however,

it is advised that normal precautions be taken

to avoid application of any voltage higher than

maximum rated voltages to these high–imped-

ance circuits.

These BiCMOS memory circuits have been

designed to meet the dc and ac specifications

shown in the tables, after thermal equilibrium

has been established. The module is in a test

socket or mounted on a printed circuit board

and transverse air flow of at leat 500 linear feet

per minute is maintained.