WFF634 datasheet(2/7 Pages) WINSEMI | Silicon N-Channel MOSFET

Part No.	WFF634

Description	Silicon N-Channel MOSFET

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Manufacturer	WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]

Direct Link	http://www.winsemi.com

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2 / 7 page

WF

WFF

F

F63

63

634

4

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cs ((((T

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=

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Characteristics

Symbol

Test Condition

Min

Type

Max

Unit

Gate leakage current

IGSS

VGS = ±20 V, VDS = 0 V

-

±100

nA

Gate−source breakdown voltage

V(BR)GSS

IG = ±10 μA, VDS = 0 V

±20

-

V

Drain cut−off current

IDSS

VDS = 200 V, VGS = 0 V

-

1

μA

Drain−source breakdown voltage

V(BR)DSS

ID = 250 μA, VGS = 0 V

250

-

V

Break Voltage Temperature

Coefficient

ΔBVDSS/

ΔTJ

ID=250μA, Referenced to 25℃

-

0.37

-

V/℃

Gate threshold voltage

VGS(th)

VDS = 10 V, ID =250 μA

2

-

4

V

Drain−source ON resistance

RDS(ON)

VGS = 10 V, ID = 5.1A

-

0.45

Ω

Forward Transconductance

gfs

VDS = 50 V, ID = 5.1A

1.6

-

S

Input capacitance

Ciss

VDS = 25 V,

VGS = 0 V,

f = 1 MHz

-

1220

-

pF

Reverse transfer capacitance

Crss

-

32

-

Output capacitance

Coss

-

130

-

Switching time

Rise time

tr

VDD =125 V,

ID =5.6A

RG=12Ω

(Note4,5)

-

9.6

-

ns

Turn−on time

ton

-

21

-

Fall time

tf

-

42

-

Turn−off time

toff

-

19

-

Total gate charge (gate−source

plus gate−drain)

Qg

VDD = 200 V,

VGS = 10 V,

ID = 5.6A

(Note4,5)

-

41

51.8

nC

Gate−source charge

Qgs

-

6.5

-

Gate−drain (“miller”) Charge

Qgd

-

22

-

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cs ((((T

T

Ta

a

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=

= 2

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5

5°C

C

C))))

Characteristics

Symbol

Test Condition

Min

Type

Max

Unit

Continuous drain reverse current

IDR

-

8.1

A

Pulse drain reverse current

IDRP

-

32

A

Forward voltage (diode)

VDSF

IDR = 8.1 A, VGS = 0 V

-

1.4

2

V

Reverse recovery time

trr

IDR = 5.6 A, VGS = 0 V,

dIDR / dt = 100 A / μs

-

198

-

ns

Reverse recovery charge

Qrr

-

1.2

2.4

μC

Note 1.Repeativity rating :pulse width limited by junction temperature

2.L=500uH,IAS=9 A,VDD=50V,RG=0Ω,Starting TJ=25℃

3.ISD≤9A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃

4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%

5.Essentially independent of operating temperature.

This transistor is an electrostatic sensitive device

Please handle with caution

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WFF634 Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

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