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C67078-S3132-A2 Datasheet(PDF) 6 Page - Siemens Semiconductor Group |
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C67078-S3132-A2 Datasheet(HTML) 6 Page - Siemens Semiconductor Group |
6 / 9 page Semiconductor Group 6 07/96 BUZ 344 Typ. output characteristics ID = ƒ(VDS) parameter: t p = 80 µs 0.0 1.0 2.0 3.0 4.0 5.0 6.0 V 8.0 V DS 0 10 20 30 40 50 60 70 80 90 100 A 120 I D V GS [V] a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l Ptot = 170W l 20.0 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: V GS 0 20 40 60 80 A 110 I D 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 Ω 0.11 R DS (on) VGS [V] = a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l l 20.0 Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 0 1 2 3 4 5 6 7 8 V 10 V GS 0 5 10 15 20 25 30 35 40 45 50 55 60 65 A 75 I D Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 0 10 20 30 40 50 A 70 I D 0 4 8 12 16 20 24 28 S 34 g fs |
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