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SFF4N60 Datasheet(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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SFF4N60 Datasheet(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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1 / 7 page  Rev.A Jun.2010 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. S S S SFF FF FF FF4N6 4N6 4N6 4N60 0 0 0 S S S Siiiilllliiiic c c co o o on n n n N N N N----Ch Ch Ch Cha a a an n n nn n n nel el el el M M M MOS OS OS OSF F F FET ET ET ET Features ■ 4A,600V,RDS(on)(Max 2.2Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage(VISO=4000V AC) ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain Source Voltage 600 V ID Continuous Drain Current(@Tc=25℃) 4* A Continuous Drain Current(@Tc=100℃) 2.5* A IDM Drain Current Pulsed (Note1) 16* A VGS Gate to Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note2) 240 mJ EAR Repetitive Avalanche Energy (Note1) 10 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 4.5 V/ ns PD Total Power Dissipation(@Tc=25℃) 33 W Derating Factor above 25℃ 0.26 W/℃ TJ,Tstg Junction and Storage Temperature -55~150 ℃ TL Channel Temperature 300 ℃ *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Value Units Min Typ Max RQJC Thermal Resistance , Junction -to -Case - - 3.79 ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 62.5 ℃/W |
Similar Part No. - SFF4N60 |
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Similar Description - SFF4N60 |
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