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BUZ111SL Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. BUZ111SL
Description  SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ111SL Datasheet(HTML) 3 Page - Siemens Semiconductor Group

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Semiconductor Group
3
28/Jan/1998
BUZ111SL
SPP80N05L
Electrical Characteristics,
at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
VDS2 * ID * RDS(on)max = 2 V, ID = 80 A
gfs
30
95
-
S
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Ciss
-
3850
4800
pF
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss
-
1090
1357
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
-
570
715
Turn-on delay time
VDD = 30 V, VGS = 4.5 V, ID = 80 A
RG = 1.3
td(on)
-
30
45
ns
Rise time
VDD = 30 V, VGS = 4.5 V, ID = 80 A
RG = 1.3
tr
-
37
56
Turn-off delay time
VDD = 30 V, VGS = 4.5 V, ID = 80 A
RG = 1.3
td(off)
-
70
105
Fall time
VDD = 30 V, VGS = 4.5 V, ID = 80 A
RG = 1.3
tf
-
36
55
Gate charge at threshold
VDD = 40 V, ID 0.1 A, VGS =0 to 1 V
Qg(th)
-
3.8
5.7
nC
Gate charge at 5.0 V
VDD = 40 V, ID = 80 A, VGS =0 to 5 V
Qg(5)
-
92
138
Gate charge total
VDD = 40 V, ID = 80 A, VGS =0 to 10 V
Qg(total)
-
155
232
Gate plateau voltage
VDD = 40 V, ID = 80 A
V(plateau)
-
3.4
-
V


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