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BUZ111SL Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BUZ111SL
Description  SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ111SL Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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Semiconductor Group
2
28/Jan/1998
BUZ111SL
SPP80N05L
Maximum Ratings
Parameter
Symbol
Values
Unit
Operating temperature
Tj
-55 ... + 175
°C
Storage temperature
Tstg
-55 ... + 175
Thermal resistance, junction - case
RthJC
0.6
K/W
Thermal resistance, junction - ambient
RthJA
62
IEC climatic category, DIN IEC 68-1
55 / 175 / 56
Electrical Characteristics,
at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
V(BR)DSS
55
-
-
V
Gate threshold voltage
VGS=VDS, ID = 240 µA
VGS(th)
1.2
1.6
2
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = -40 °C
VDS = 50 V, VGS = 0 V, Tj = 25 °C
VDS = 50 V, VGS = 0 V, Tj = 150 °C
IDSS
-
-
-
-
0.1
-
100
1
0.1
µA
Gate-source leakage current
VGS = 20 V, VDS = 0 V
IGSS
-
10
100
nA
Drain-Source on-resistance
VGS = 4.5 V, ID = 80 A
VGS = 10 V, ID = 80 A
RDS(on)
-
-
0.0055
0.0085
0.007
0.01


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