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BUZ111SL Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. BUZ111SL
Description  SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ111SL Datasheet(HTML) 1 Page - Siemens Semiconductor Group

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Semiconductor Group
1
28/Jan/1998
BUZ111SL
SPP80N05L
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Logic Level
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
• also in SMD available
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ111SL
55 V
80 A
0.01
TO-220 AB
Q67040-S4003-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
TC = 100 °C
ID
80
A
Pulsed drain current
TC = 25 °C
IDpuls
320
Avalanche energy, single pulse
ID = 80 A, VDD = 25 V, RGS = 25
L
= 220 µH, Tj = 25 °C
EAS
700
mJ
Avalanche current,limited by Tjmax
IAR
80
A
Avalanche energy,periodic limited by Tjmax
EAR
25
mJ
Reverse diode dv/dt
IS = 80 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
dv/dt
6
kV/µs
Gate source voltage
VGS
± 14
V
Power dissipation
TC = 25 °C
Ptot
250
W


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