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BUZ111SL Datasheet(PDF) 6 Page - Siemens Semiconductor Group |
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BUZ111SL Datasheet(HTML) 6 Page - Siemens Semiconductor Group |
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6 / 8 page 
Semiconductor Group 6 28/Jan/1998 BUZ111SL SPP80N05L Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 V DS 0 20 40 60 80 100 120 140 A 180 I D V GS [V] a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 6.5 j j 7.0 k k 8.0 l Ptot = 250W l 10.0 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 0 20 40 60 80 100 A 140 I D 0.000 0.004 0.008 0.012 0.016 0.020 0.024 Ω 0.032 R DS (on) VGS [V] = a 2.5 VGS [V] = a a 3.0 b b 3.5 c c 4.0 d d 4.5 e e 5.0 f f 5.5 g g 6.0 h h 6.5 i i 7.0 j j 8.0 k k 10.0 Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 0 1 2 3 4 5 6 7 8 V 10 V GS 0 20 40 60 A 100 I D |
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