BUZ111SL datasheet(6/8 Pages) SIEMENS

Part #	BUZ111SL

Description	SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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6 / 8 page

Semiconductor Group

6

28/Jan/1998

BUZ111SL

SPP80N05L

Typ. output characteristics

ID = ƒ(VDS)

parameter: tp = 80 µs

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

V

5.0

V

DS

0

20

40

60

80

100

120

140

A

180

I

D

V

GS

[V]

a

2.5

b

3.0

c

3.5

d

4.0

e

4.5

f

5.0

g

5.5

h

6.0

i

6.5

j

7.0

k

8.0

l

Ptot = 250W

l

10.0

Typ. drain-source on-resistance

RDS (on) = ƒ(ID)

parameter: tp = 80 µs, Tj = 25 °C

0

20

40

60

80

100

A

140

I

D

0.000

0.004

0.008

0.012

0.016

0.020

0.024

Ω

0.032

R

DS (on)

VGS [V] =

a

2.5

VGS [V] =

a

3.0

b

3.5

c

4.0

d

4.5

e

5.0

f

5.5

g

6.0

h

6.5

i

7.0

j

8.0

k

10.0

Typ. transfer characteristics ID = f (VGS)

parameter: tp = 80 µs

VDS≥2 x ID x RDS(on)max

0

1

2

3

4

5

6

7

8

V

10

V

GS

0

20

40

60

A

100

I

D

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BUZ111SL Datasheet(PDF) 6 Page - Siemens Semiconductor Group

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