BUZ111S datasheet(4/8 Pages) SIEMENS

Part #	BUZ111S

Description	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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4 / 8 page

Semiconductor Group

4

28/Jan/1998

BUZ111S

SPP80N05

Electrical Characteristics,

at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Reverse Diode

Inverse diode continuous forward current

TC = 25 °C

IS

-

80

A

Inverse diode direct current,pulsed

TC = 25 °C

ISM

-

320

Inverse diode forward voltage

VGS = 0 V, IF = 160 A

VSD

-

1.25

1.8

V

Reverse recovery time

VR = 30 V, IF=lS, diF/dt = 100 A/µs

trr

-

105

160

ns

Reverse recovery charge

VR = 30 V, IF=lS, diF/dt = 100 A/µs

Qrr

-

0.29

0.45

µC

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BUZ111S Datasheet(PDF) 4 Page - Siemens Semiconductor Group

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