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BUZ102AL Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BUZ102AL
Description  SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ102AL Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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Semiconductor Group
2
07/96
BUZ 102AL
Maximum Ratings
Parameter
Symbol
Values
Unit
Operating temperature
Tj
-55 ... + 175
°C
Storage temperature
Tstg
-55 ... + 175
Thermal resistance, chip case
RthJC
≤ 0.83
K/W
Thermal resistance, chip to ambient
RthJA
≤ 75
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 175 / 56
Electrical Characteristics, at
Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = -40 °C
V(BR)DSS
50
-
-
V
Gate threshold voltage
VGS=VDS, ID = 1 mA
VGS(th)
1.2
1.6
2
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = 25 °C
VDS = 50 V, VGS = 0 V, Tj = -40 °C
VDS = 50 V, VGS = 0 V, Tj = 150 °C
IDSS
-
-
-
10
1
0.1
100
100
1
µA
nA
µA
Gate-source leakage current
VGS = 20 V, VDS = 0 V
IGSS
-
10
100
nA
Drain-Source on-resistance
VGS = 5 V, ID = 21 A
RDS(on)
-
0.02
0.028


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