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BUZ102AL Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. BUZ102AL
Description  SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ102AL Datasheet(HTML) 1 Page - Siemens Semiconductor Group

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Semiconductor Group
1
07/96
BUZ 102AL
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
• d
v/dt rated
• Low on-resistance
• 175 °C operating temperature
• also in TO-220 SMD available
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 102AL
50 V
42 A
0.028
TO-220 AB
C67078-S1356-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
TC = 97 °C
ID
42
A
Pulsed drain current
TC = 25 °C
IDpuls
168
Avalanche energy, single pulse
ID = 42 A, VDD = 25 V, RGS = 25 Ω
L = 102 µH, Tj = 25 °C
EAS
180
mJ
Reverse diode d
v/dt
IS = 42 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
d
v/dt
6
kV/µs
Gate source voltage
VGS
± 14
V
Gate-source peak voltage,aperiodic
Vgs
± 20
Power dissipation
TC = 25 °C
Ptot
200
W


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