 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
BUZ102AL Datasheet(PDF) 6 Page - Siemens Semiconductor Group |
|
||||||||||||||||||||||||||||||
BUZ102AL Datasheet(HTML) 6 Page - Siemens Semiconductor Group |
|
|
6 / 9 page 
Semiconductor Group 6 07/96 BUZ 102AL Typ. output characteristics ID = ƒ(VDS) parameter: t p = 80 µs 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 V DS 0 10 20 30 40 50 60 70 80 A 100 I D V GS [V] a a 2.0 b b 2.5 c c 3.0 d d 3.5 e e 4.0 f f 4.5 g g 5.0 h h 5.5 i i 6.0 j j 7.0 k k 8.0 l Ptot = 200W l 10.0 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 21 A, VGS = 5 V -60 -20 20 60 100 °C 180 T j 0.000 0.010 0.020 0.030 0.040 0.050 0.060 Ω 0.080 R DS (on) typ 98% Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 0 5 10 15 20 25 30 35 A 45 I D 0 5 10 15 20 25 30 35 S 45 g fs Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 0 1 2 3 4 5 6 7 8 V 10 V GS 0 5 10 15 20 25 30 35 40 A 50 I D |
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
