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BUZ102AL Datasheet(PDF) 6 Page - Siemens Semiconductor Group

Part No. BUZ102AL
Description  SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ102AL Datasheet(HTML) 6 Page - Siemens Semiconductor Group

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Semiconductor Group
6
07/96
BUZ 102AL
Typ. output characteristics
ID = ƒ(VDS)
parameter:
t
p = 80 µs
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
5.0
V
DS
0
10
20
30
40
50
60
70
80
A
100
I
D
V
GS
[V]
a
a
2.0
b
b
2.5
c
c
3.0
d
d
3.5
e
e
4.0
f
f
4.5
g
g
5.0
h
h
5.5
i
i
6.0
j
j
7.0
k
k
8.0
l
Ptot = 200W
l
10.0
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter:
ID = 21 A, VGS = 5 V
-60
-20
20
60
100
°C
180
T
j
0.000
0.010
0.020
0.030
0.040
0.050
0.060
0.080
R
DS (on)
typ
98%
Typ. forward transconductance
gfs = f (ID)
parameter:
tp = 80 µs,
VDS≥2 x ID x RDS(on)max
0
5
10
15
20
25
30
35
A
45
I
D
0
5
10
15
20
25
30
35
S
45
g
fs
Typ. transfer characteristics
ID = f (VGS)
parameter:
tp = 80 µs
VDS≥2 x ID x RDS(on)max
0
1
2
3
4
5
6
7
8
V
10
V
GS
0
5
10
15
20
25
30
35
40
A
50
I
D


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