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BUZ102AL Datasheet(PDF) 5 Page - Siemens Semiconductor Group |
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BUZ102AL Datasheet(HTML) 5 Page - Siemens Semiconductor Group |
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Semiconductor Group 5 07/96 BUZ 102AL Drain current ID = ƒ(TC) parameter: V GS ≥ 5 V 0 20 40 60 80 100 120 140 °C 180 T C 0 5 10 15 20 25 30 35 A 45 I D Power dissipation Ptot = ƒ(TC) 0 20 40 60 80 100 120 140 °C 180 T C 0 20 40 60 80 100 120 140 160 180 W 220 P tot Safe operating area I D = ƒ(VDS) parameter: D = 0.01, T C = 25°C 0 10 1 10 2 10 3 10 A I D 10 0 10 1 10 2 V V DS R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs t p = 30.0µs Transient thermal impedance Z th JC = ƒ(tp) parameter: D = t p / T -3 10 -2 10 -1 10 0 10 K/W Z thJC 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 |
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