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BUZ100SL-4 Datasheet(PDF) 8 Page - Siemens Semiconductor Group |
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BUZ100SL-4 Datasheet(HTML) 8 Page - Siemens Semiconductor Group |
8 / 8 page Semiconductor Group 8 01/Oct/1997 Preliminary data BUZ 100SL-4 Avalanche energy EAS = ƒ(Tj) parameter: ID = 7.4 A, VDD = 25 V R GS = 25 Ω, L = 13.8 mH 20 40 60 80 100 120 140 °C 180 T j 0 40 80 120 160 200 240 280 320 mJ 400 E AS Typ. gate charge V GS = ƒ(QGate) parameter: ID puls = 7 A 0 20 40 60 80 100 nC 130 Q Gate 0 2 4 6 8 10 12 V 16 V GS DS max V 0,8 DS max V 0,2 Drain-source breakdown voltage V (BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 180 T j 49 51 53 55 57 59 61 V 65 V (BR)DSS |
Similar Part No. - BUZ100SL-4 |
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Similar Description - BUZ100SL-4 |
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