BUZ100SL-4 datasheet(4/8 Pages) SIEMENS

Part #	BUZ100SL-4

Description	SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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4 / 8 page

Semiconductor Group

4

01/Oct/1997

BUZ 100SL-4

Preliminary data

Electrical Characteristics, at

Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Reverse Diode

Inverse diode continuous forward current

TA = 25 °C

IS

-

7.4

A

Inverse diode direct current, pulsed

TA = 25 °C

ISM

-

29.6

Inverse diode forward voltage

VGS = 0 V, IF = 14.8 A

VSD

-

0.9

1.6

V

Reverse recovery time

VR = 30 V, IF=lS, diF/dt = 100 A/µs

trr

-

75

115

ns

Reverse recovery charge

VR = 30 V, IF=lS, diF/dt = 100 A/µs

Qrr

-

0.21

0.315

µC

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BUZ100SL-4 Datasheet(PDF) 4 Page - Siemens Semiconductor Group

BUZ100SL-4 Datasheet(HTML) 4 Page - Siemens Semiconductor Group

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