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SBW3320 Datasheet(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd

Part # SBW3320
Description  High Voltage Fast-Switching NPN Power Transistor
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Manufacturer  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Direct Link  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd

SBW3320 Datasheet(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd

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background image
Symbol
Parameter
Test Conditions
Value
Units
VCES
Collector-Emitter Voltage
VBE = 0
500
V
VCEO
Collector-Emitter Voltage
IB = 0
400
V
VEBO
Emitter-Base Voltage
IC = 0
7.0
V
IC
Collector Current
15
A
ICP
Collector pulse Current
30
A
IB
Base Current
5.0
A
IBM
Base Peak Current
tP = 5ms
10
A
PC
Total Dissipation at Tc = 25℃
80
W
TJ
Operation Junction Temperature
150
℃
TSTG
Storage Temperature
-65 ~ 150
℃
SBW3320
SBW3320
SBW3320
SBW3320
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
High
High
High
High Voltage
Voltage
Voltage
Voltage Fast-Swit
Fast-Swit
Fast-Swit
Fast-Switcccching
hing
hing
hing NPN
NPN
NPN
NPN Power
Power
Power
Power Transistor
Transistor
Transistor
Transistor
Features
◆ Very High Switching Speed
◆ High Voltage Capability
◆ Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
Thermal Characteristics
Symbol
Parameter
Value
Units
RθJc
Thermal Resistance Junction to Case
1.56
℃/W
RθJA
Thermal Resistance Junction to Ambient
62.5
℃/W
Jal 2011 .
Rev.2
T02-1
SBW3320
SBW3320
SBW3320
SBW3320
TO3P
TO3P
TO3P
TO3P
TO247
TO247
TO247
TO247
SBW3320
SBW3320
SBW3320
SBW3320W
W
W
W


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