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BUP604 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BUP604
Description  IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
Download  8 Pages
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BUP604 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

   
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Semiconductor Group
2
Jul-31-1996
BUP 604
Maximum Ratings
Parameter
Symbol
Values
Unit
DIN humidity category, DIN 40 040
-
E
-
IEC climatic category, DIN IEC 68-1
-
55 / 150 / 56
Thermal Resistance
Thermal resistance, chip case
RthJC
≤ 0.4
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
VGE = VCE, IC = 0.7 mA
VGE(th)
4.5
5.5
6.5
V
Collector-emitter saturation voltage
VGE = 15 V, IC = 50 A, Tj = 25 °C
VGE = 15 V, IC = 50 A, Tj = 125 °C
VGE = 15 V, IC = 100 A, Tj = 25 °C
VGE = 15 V, IC = 100 A, Tj = 125 °C
VCE(sat)
-
-
-
-
3.3
3
2.2
2.1
-
3.8
2.8
2.7
Zero gate voltage collector current
VCE = 600 V, VGE = 0 V, Tj = 25 °C
ICES
-
-
300
µA
Gate-emitter leakage current
VGE = 25 V, VCE = 0 V
IGES
-
-
100
nA
AC Characteristics
Transconductance
VCE = 20 V, IC = 50 A
gfs
6
-
-
S
Input capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Ciss
-
2600
3600
pF
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Coss
-
280
420
Reverse transfer capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Crss
-
165
250


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