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BUP307 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. BUP307
Description  IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BUP307 Datasheet(HTML) 1 Page - Siemens Semiconductor Group

   
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Semiconductor Group
1
Dec-07-1995
BUP 307
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Pin 1
Pin 2
Pin 3
G
C
E
Type
VCE
IC
Package
Ordering Code
BUP 307
1200V 35A
TO-218 AB
Q67078-A4201-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE
1200
V
Collector-gate voltage
RGE = 20 kΩ
VCGR
1200
Gate-emitter voltage
VGE
± 20
DC collector current
TC = 25 °C
TC = 90 °C
IC
23
35
A
Pulsed collector current,
tp = 1 ms
TC = 25 °C
TC = 90 °C
ICpuls
46
70
Avalanche energy, single pulse
IC = 15 A, VCC = 50 V, RGE = 25 Ω
L = 200 µH, Tj = 25 °C
EAS
23
mJ
Power dissipation
TC = 25 °C
Ptot
310
W
Chip or operating temperature
Tj
-55 ... + 150
°C
Storage temperature
Tstg
-55 ... + 150


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