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BUP300 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BUP300
Description  IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
Download  7 Pages
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BUP300 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

   
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Semiconductor Group
2
Jul-30-1996
BUP 300
Maximum Ratings
Parameter
Symbol
Values
Unit
DIN humidity category, DIN 40 040
-
E
-
IEC climatic category, DIN IEC 68-1
-
55 / 150 / 56
Thermal Resistance
Thermal resistance, chip case
RthJC
≤ 3.1
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
VGE = VCE, IC = 0.1 mA
VGE(th)
4.5
5.5
6.5
V
Collector-emitter saturation voltage
VGE = 15 V, IC = 1.5 A, Tj = 25 °C
VGE = 15 V, IC = 1.5 A, Tj = 125 °C
VGE = 15 V, IC = 1.5 A, Tj = 150 °C
VCE(sat)
-
-
-
4
3.8
2.8
4.5
4.3
3.3
Zero gate voltage collector current
VCE = 1000 V, VGE = 0 V, Tj = 25 °C
VCE = 1000 V, VGE = 0 V, Tj = 125 °C
ICES
-
-
-
1
100
25
µA
Gate-emitter leakage current
VGE = 20 V, VCE = 0 V
IGES
-
0.1
100
nA
AC Characteristics
Transconductance
VCE = 20 V, IC = 1.5 A
gfs
-
0.6
-
S
Input capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Ciss
-
225
320
pF
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Coss
-
25
40
Reverse transfer capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Crss
-
13
24


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