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BUP203 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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BUP203 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
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Semiconductor Group 2 Dec-06-1995 BUP 203 Maximum Ratings Parameter Symbol Values Unit DIN humidity category, DIN 40 040 - E - IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56 Thermal Resistance IGBT thermal resistance, chip case RthJC ≤ 0.63 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Gate threshold voltage VGE = VCE, IC = 0.7 mA VGE(th) 4.5 5.5 6.5 V Collector-emitter saturation voltage VGE = 15 V, IC = 10 A, Tj = 25 °C VGE = 15 V, IC = 10 A, Tj = 125 °C VGE = 15 V, IC = 10 A, Tj = 150 °C VCE(sat) - - - 4 3.8 2.8 4.5 4.3 3.3 Zero gate voltage collector current VCE = 1000 V, VGE = 0 V, Tj = 25 °C VCE = 1000 V, VGE = 0 V, Tj = 125 °C ICES - - - - 700 150 µA Gate-emitter leakage current VGE = 20 V, VCE = 0 V IGES - 0.1 100 nA AC Characteristics Transconductance VCE = 20 V, IC = 10 A gfs 3.5 5.5 - S Input capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Ciss - 1300 1750 pF Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Coss - 100 150 Reverse transfer capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Crss - 50 75 |
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