BUP200D datasheet(6/8 Pages) SIEMENS

Part #	BUP200D

Description	IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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6 / 8 page

Semiconductor Group

6

Dec-06-1995

BUP 200 D

Typ. gate charge

VGE = ƒ(QGate)

parameter:

IC puls = 1 A

0

4

8

12

16

20

24

32

Q

Gate

0

2

4

6

8

10

12

14

16

V

20

V

GE

800 V

400 V

Typ. capacitances

C = f (VCE)

parameter:

VGE = 0 V, f = 1 MHz

Short circuit safe operating area

ICsc = f (VCE) , Tj = 150°C

parameter:

VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH

0

200

400

600

800

1000 1200

V

1600

0

2

4

6

10

I

Csc/IC(90°C)

Reverse biased safe operating area

ICpuls = f (VCE) , Tj = 150°C

parameter:

VGE = 15 V

0

200

400

600

800

1000 1200

V

1600

0.0

0.5

1.0

1.5

2.5

I

Cpuls/IC

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BUP200D Datasheet(PDF) 6 Page - Siemens Semiconductor Group

BUP200D Datasheet(HTML) 6 Page - Siemens Semiconductor Group

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