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BTS734L1 Datasheet(PDF) 4 Page - Siemens Semiconductor Group |
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BTS734L1 Datasheet(HTML) 4 Page - Siemens Semiconductor Group |
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4 / 16 page 
BTS 734 L1 Semiconductor Group 4 Electrical Characteristics Parameter and Conditions, each of the two channels Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (Vbb to OUT) IL = 2 A each channel, Tj = 25°C: Tj = 150°C: two parallel channels, Tj = 25°C: RON -- 36 67 18 40 75 20 m Ω Nominal load current one channel active: two parallel channels active: Device on PCB5), Ta = 85°C, Tj ≤ 150°C IL(NOM) 4.4 6.7 4.8 7.3 -- A Output current while GND disconnected or pulled up; Vbb = 30 V, VIN = 0, see diagram page 9 IL(GNDhigh) -- -- 10 mA Turn-on time7) IN to 90% VOUT: Turn-off time IN to 10% VOUT: RL = 12 Ω, Tj =-40...+150°C ton toff 80 80 180 250 350 450 µs Slew rate on 7) 10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C: d V/dton 0.1 -- 1 V/ µs Slew rate off 7) 70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C: -d V/dtoff 0.1 -- 1 V/ µs Operating Parameters Operating voltage8) Tj =-40...+150°C: Vbb(on) 5.0 -- 34 V Undervoltage shutdown Tj =-40...+150°C: Vbb(under) 3.5 -- 5.0 V Undervoltage restart Tj =-40...+25°C: Tj =+150°C: Vbb(u rst) -- -- 5.0 7.0 V Undervoltage restart of charge pump see diagram page 14 Tj =-40...+150°C: Vbb(ucp) -- 5.6 7.0 V Undervoltage hysteresis ∆V bb(under) = Vbb(u rst) - Vbb(under) ∆V bb(under) -- 0.2 -- V Overvoltage shutdown Tj =-40...+150°C: Vbb(over) 34 -- 43 V Overvoltage restart Tj =-40...+150°C: Vbb(o rst) 33 -- -- V Overvoltage hysteresis Tj =-40...+150°C: ∆V bb(over) -- 0.5 -- V Overvoltage protection9) Tj =-40...+150°C: I bb = 40 mA Vbb(AZ) 42 47 -- V Standby current, all channels off Tj =25°C: VIN = 0 Tj =150°C: Ibb(off) -- -- 16 24 40 50 µA 7 ) See timing diagram on page 12. 8) At supply voltage increase up to Vbb = 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V 9) see also VON(CL) in circuit diagram on page 8. |
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