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BTS721L1 Datasheet(PDF) 3 Page - Siemens Semiconductor Group |
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BTS721L1 Datasheet(HTML) 3 Page - Siemens Semiconductor Group |
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3 / 15 page 
BTS721L1 Maximum Ratings at Tj = 25°C unless otherwise specified Parameter Symbol Values Unit Semiconductor Group 3 Load current (Short-circuit current, see page 5) IL self-limited A Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3) = 2 Ω, td = 200 ms; IN = low or high, each channel loaded with RL = 4.7 Ω, VLoad dump4) 60 V Operating temperature range Storage temperature range Tj Tstg -40 ...+150 -55 ...+150 °C Power dissipation (DC)5 Ta = 25°C: (all channels active) Ta = 85°C: Ptot 3.7 1.9 W Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C5), IL = 2.9 A, ZL = 58 mH, 0 Ω one channel: IL = 4.3 A, ZL = 58 mH, 0 Ω two parallel channels: IL = 6.3 A, ZL = 58 mH, 0 Ω four parallel channels: see diagrams on page 9 and page 10 EAS 0.3 0.65 1.5 J Electrostatic discharge capability (ESD) (Human Body Model) VESD 1.0 kV Input voltage (DC) VIN -10 ... +16 V Current through input pin (DC) Current through status pin (DC) see internal circuit diagram page 8 IIN IST ±2.0 ±5.0 mA Thermal resistance junction - soldering point5),6) each channel: Rthjs 15 K/W junction - ambient5) one channel active: all channels active: Rthja 41 34 2 ) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input protection is integrated. 3) RI = internal resistance of the load dump test pulse generator 4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 5 ) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for Vbb connection. PCB is vertical without blown air. See page 15 6 ) Soldering point: upper side of solder edge of device pin 15. See page 15 |
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