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Semiconductor Corp.

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JEDEC TO-78 CASE - MECHANICAL OUTLINE

2N2920

NPN SILICON

DUAL TRANSISTORS

R0 (22-February 2007)

ELECTRICAL CHARACTERISTICS PER TRANSISTOR (continued): (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

Cob

VCB=5.0V, IE=0, f=140kHz

6.0

pF

NF

VCE=5.0V, IC=10µA, RS=10kΩ

3.0

dB

f=1.0kHz, BW=200Hz

MATCHING CHARACTERISTICS:

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

hFE1/hFE2*VCE=5.0V, IC=100µA

0.9

1.0

|VBE1-VBE2|VCE=5.0V, IC=10µA

5.0

mV

|VBE1-VBE2|VCE=5.0V, IC=100µA

3.0

mV

|VBE1-VBE2|VCE=5.0V, IC=1.0mA

5.0

mV

∆(VBE1-VBE2)VCE=5.0V, IC=100µA, TA= -55°C to +25°C

0.8

mV

∆(VBE1-VBE2)VCE=5.0V, IC=100µA, TA= +25°C to +125°C

1.0

mV

* The lowest hFE reading is taken as hFE1