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BTS620L1 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BTS620L1 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 12 page ![]() PROFET® BTS 620 L1 Semiconductor Group 1 12.96 Smart Two Channel Highside Power Switch Features • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in ON-state • CMOS compatible input • Loss of ground and loss of V bb protection • Electrostatic discharge (ESD) protection Application • µC compatible power switch with diagnostic feedback for 12 V DC grounded loads • Most suitable for resistive and lamp loads General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions. + V bb IN1 ST Signal GND ESD PROFET ® OUT1 GND Logic Voltage sensor Voltage source Open load detection 1 Short to Vbb Level shifter Temperature sensor 1 Rectifier 1 Gate 1 protection Current limit 1 3 5 2 4 1 Load GND Load V Logic Overvoltage protection OUT2 Open load detection 2 Short to Vbb Level shifter Temperature sensor 2 Rectifier 2 Gate 2 protection Current limit 2 7 IN2 6 GND RR O1 O2 Charge pump 1 Charge pump 2 1 ) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Product Summary Overvoltage protection Vbb(AZ) 43 V Operating voltage Vbb(on) 5.0 ... 24 V channels: each both parallel On-state resistance RON 100 50 m Ω Load current (ISO) IL(ISO) 4.4 8.5 A Current limitation IL(SCr) 10 10 A TO-220AB/7 1 7 Standard |