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BTS612N1 Datasheet(PDF) 5 Page - Siemens Semiconductor Group |
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BTS612N1 Datasheet(HTML) 5 Page - Siemens Semiconductor Group |
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5 / 14 page 
BTS 612 N1 Parameter and Conditions, each channel Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group 5 Protection Functions Initial peak short circuit current limit (pin 4 to 1 or 7) IL(SCp) Tj =-40°C: Tj =25°C: Tj =+150°C: 5.5 4.5 2.5 9.5 7.5 4.5 13 11 7 A Repetitive short circuit shutdown current limit IL(SCr) Tj = Tjt (see timing diagrams, page 11) -- 4 -- A Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA: VON(CL) 41 47 53 V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis ∆T jt -- 10 -- K Reverse battery (pin 4 to 2) 9) - Vbb -- -- 32 V Reverse battery voltage drop (Vout > Vbb) IL = -1.9 A, each channel Tj=150 °C: -VON(rev) -- 610 -- mV Diagnostic Characteristics Open load detection current (included in standby current Ibb(off)) IL(off) -- 30 -- µA Open load detection voltage Tj=-40..150°C: VOUT(OL) 234 V 9 ) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 8). |
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