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BTS412B2 Datasheet(PDF) 5 Page - Siemens Semiconductor Group |
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BTS412B2 Datasheet(HTML) 5 Page - Siemens Semiconductor Group |
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5 / 14 page 
BTS 412B2 Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group 5 Input and Status Feedback11) Input resistance see circuit page 6 RI -- 9 -- k Ω Input turn-on threshold voltage Tj =-40..+150°C: VIN(T+) 1.5 -- 2.4 V Input turn-off threshold voltage Tj =-40..+150°C: VIN(T-) 1.0 -- -- V Input threshold hysteresis ∆ V IN(T) -- 0.5 -- V Off state input current (pin 2), VIN = 0.4 V IIN(off) 1-- 30 µA On state input current (pin 2), VIN = 3.5 V IIN(on) 10 25 70 µA Delay time for status with open load after Input neg. slope (see diagram page 11) td(ST OL3) -- 200 -- µs Status invalid after positive input slope (short circuit) Tj=-40 ... +150°C: td(ST SC) -- -- 450 µs Status output (CMOS) Tj =-40...+150°C, IST= - 50 µA: Tj =-40...+150°C, IST = +1.6 mA: Max. status current for current source (out): valid status output, current sink (in) : Tj =-40...+150°C VST(high)12) VST(low) -IST +IST13) 4.4 -- -- -- 5.1 -- -- -- 6.5 0.4 0.25 1.6 V mA 11) If a ground resistor R GND is used, add the voltage drop across this resistor. 12 ) VSt high ≈ Vbb during undervoltage shutdown 13 ) No current sink capability during undervoltage shutdown |
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