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R6015ANX Datasheet(PDF) 1 Page - Rohm |
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R6015ANX Datasheet(HTML) 1 Page - Rohm |
1 / 14 page Datasheet www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/13 2012.02 - Rev.B R6015ANX Nch 600V 15A Power MOSFET Bulk - Type Packing mJ V 15 Tape width (mm) - Reel size (mm) Value V 500 ±15 ±30 A Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current 7.5 - EAR *4 mJ A 3.5 R6015ANX Unit 600 EAS *3 ID,pulse *2 ID *1 ±7.0 V/ns 150 °C W °C 15 −55 to +150 50 Reverse diode dv/dt IAR *3 Range of storage temperature Tstg Power dissipation (Tc = 25°C) dv/dt *5 Junction temperature PD Tj A A Symbol Basic ordering unit (pcs) Pulsed drain current Switching Power Supply VDSS ID *1 VGSS ±60 Marking Taping code 1) Low on-resistance. 6) Pb-free lead plating ; RoHS compliant Gate - Source voltage Parameter Tc = 25°C Drain - Source voltage Absolute maximum ratings (T a = 25°C) Tc = 100°C Features 50W Continuous drain current 3) Gate-source voltage (VGSS) guaranteed to be ±30V. Application 4) Drive circuits can be simple. 2) Fast switching speed. Outline Inner circuit Packaging specifications TO-220FM 600V 0.3 Ω 15A 5) Parallel use is easy. VDSS RDS(on) (Max.) ID PD (1) Gate (2) Drain (3) Source *1 Body Diode (1)(2)(3) |
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