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BTS121A Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BTS121A
Description  TEMPFET (N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BTS121A Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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Electrical Characteristics
at
T
j = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS = 0, ID = 0.25 mA
V
(BR)DSS
100
V
Gate threshold voltage
V
GS = VDS, ID = 1 mA
V
GS(th)
1.5
2.0
2.5
Zero gate voltage drain current
V
GS = 0 V, VDS = 100
T
j = 25 °C
T
j = 125 °C
I
DSS
0.1
10
1.0
100
µA
Gate-source leakage current
V
GS = ± 20 V, VDS = 0
T
j = 25 °C
T
j = 150 °C
I
GSS
10
2
100
4
nA
µA
Drain-source on-state resistance
V
GS = 4.5 V, ID = 9.5 A
R
DS(on)
0.085
0.1
Dynamic Characteristics
Forward transconductance
V
DS ≥ 2 × ID × RDS(on)max, ID = 9.5 A
g
fs
814
S
Input capacitance
V
GS = 0, VDS = 25 V, f = 1 MHz
C
iss
1200
1500
pF
Output capacitance
V
GS = 0, VDS = 25 V, f = 1 MHz
C
oss
320
580
Reverse transfer capacitance
V
GS = 0, VDS = 25 V, f = 1 MHz
C
rss
160
260
Turn-on time
t
on, (ton = td(on) + tr)
V
CC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50 Ω
t
d(on)
–25
40
ns
t
r
110
170
Turn-off time
t
off, (toff = td(off) + tf)
V
CC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50 Ω
t
d(off)
210
270
t
f
100
130
BTS 121A


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