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BTS121A Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BTS121A Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 9 page ![]() Semiconductor Group 1 04.97 TEMPFET® BTS 121A 3 2 1 Features q N channel q Logic level q Enhancement mode q Temperature sensor with thyristor characteristic q The drain pin is electrically shorted to the tab Pin 1 2 3 GD S Type V DS I D R DS(on) Package Ordering Code BTS 121A 100 V 22 A 0.1 Ω TO-220AB C67078-S5010-A2 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage V DS 100 V Drain-gate voltage, R GS = 20 kΩ V DGR 100 Gate-source voltage V GS ± 10 Continuous drain current, T C = 25 °C I D 22 A ISO drain current T C = 85 °C, VDS = 10 V, VDS = 0.5 V I D-ISO 3.5 Pulsed drain current, T C = 25 °C I D puls 88 Short circuit current, T j = – 55 ... + 150 °C I SC 68 Short circuit dissipation, T j = – 55 ... + 150 °C V DS ≤ 50 V / VDS ≤ 15 V P SCmax 800 / 1000 W Power dissipation P tot 95 Operating and storage temperature range T j, Tstg – 55 ... + 150 °C DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 Thermal resistance Chip-case Chip-ambient R th JC R th JA ≤ 1.32 ≤ 75 K/W |