R6004CND datasheet(3/6 Pages) ROHM

Part #	R6004CND

Description	10V Drive Nch MOSFET

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Manufacturer	ROHM [Rohm]

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Data Sheet

R6004CND

Electrical characteristic curves

0.01

0.1

1

10

0.0

0.5

1.0

1.5

V

GS= 0V

Pulsed

T

a=125℃

T

a= 75℃

T

a= 25℃

T

a= -25℃

0

1

2

3

4

5

-50

0

50

100

150

V

GS= 10V

Pulsed

I

D= 2.0A

I

D= 4.0A

0

0.1

0.2

0.3

0.4

0.5

0

0.2

0.4

0.6

0.8

1

Drain-Source Voltage : V

DS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

V

GS=10.0V

V

GS=6.0V

V

GS=7.0V

V

GS=5.0V

V

GS=4.5V

V

GS=8.0V

V

GS=6.5V

T

a=25℃

pulsed

0

1

2

3

4

0

1

2

3

4

5

6

7

8

9

10

Drain-Source Voltage : V

DS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

V

GS=10.0V

V

GS=5.0V

V

GS=6.0V

V

GS=4.5V

V

GS=7.0V

V

GS=8.0V

V

GS=6.5V

T

a=25℃

pulsed

0.001

0.01

0.1

1

10

100

0

2

4

6

8

10

V

DS= 10V

Pulsed

T

a=125℃

T

a= 75℃

T

a= 25℃

T

a= -25℃

Fig.3 Typical Transfer Characteristics

GATE-SOURCE VOLTAGE : V

GS (V)

Fig.4 Gate Threshold Voltage

vs. Channel Temperature

0

1

2

3

4

5

6

-50

0

50

100

150

V

DS= 10V

I

D= 1mA

CHANNEL TEMPERATURE: T

ch (℃)

Fig.5 Static Drain-Source On-State

Resistance vs. Drain Current

DRAIN CURRENT : I

D (A)

0

0.5

1

1.5

2

2.5

3

3.5

4

0

5

10

15

I

D= 2.0A

I

D= 4.0A

T

a=25℃

pulsed

Fig.6 Static Drain-Source On-State

Resistance vs. Gate Source

GATE-SOURCE VOLTAGE : V

GS (V)

Fig.7 Static Drain-Source On-State

Resistance vs. Channel Temperature

CHANNEL TEMPERATURE: T

ch (℃)

0.001

0.01

0.1

1

10

100

0.01

0.1

1

10

V

DS= 10V

Pulsed

T

a=125℃

T

a= 75℃

T

a= 25℃

T

a= -25℃

Fig.8 Forward Transfer Admittance

vs. Drain Current

DRAIN CURRENT : I

D (A)

Fig.9 Source Current vs.

Sourse-Drain Voltage

SOURCE-DRAIN VOLTAGE : V

SD (V)

0.01

0.1

1

10

100

0.1

1

10

V

GS= 10V

Pulsed

T

a=125℃

T

a= 75℃

T

a= 25℃

T

a= -25℃

3/5

2011.10 - Rev.A

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