DTC115TM datasheet(2/3 Pages) ROHM

Part #	DTC115TM

Description	100mA / 50V Digital transistors(with built-in resistors)

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Manufacturer	ROHM [Rohm]

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c

2011.11 - Rev.C

Data Sheet

DTC115TM / DTC115TE / DTC115TUA / DTC115TKA



Absolute maximum ratings (Ta=25

C)

Parameter

Symbol

Pc

Tj

Tstg

Limits

50

5

100

200

150

DTC115TUA / DTC115TKA

DTC115TM / DTC115TE

150

−55 to +150

Unit

V

mA

mW

˚C

Collector power

dissipation

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Junction temperature

Storage temperature

VCBO

VCEO

VEBO

IC



Electrical characteristics (Ta=25

C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

50

5

−

100

−

70

−

250

100

−

0.5

0.3

600

−

130

V

μA

V

−

MHz

k

Ω

IC=50

μA

IC

=1mA

IE

=50

μA

VCB

=50V

VEB

=4V

IC/IB

=1mA/0.1mA

IC

=1mA, VCE=5V

VCE

=10V, IE=

−5mA, f=100MHz

∗

−

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

Input resistance

∗ Characteristics of built-in transistor.

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VCE(sat)

hFE

fT

R1



Electrical characteristics curves

10

100

1000

0.1

1

10

COLLECTOR CURRENT : IC (mA)

VCE=5V

Ta=100ºC

25ºC

-40ºC

Fig 1. DC Current Gain vs. Collector Current

0.01

0.1

1

0.01

0.1

1

10

OUTPUT CURRENT : IO (mA)

IC/IB=20/1

Ta=100ºC

25ºC

-40ºC

Fig 2. Collector Voltage vs.

Collector Saturation Voltage.

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