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BSS296 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BSS296
Description  SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BSS296 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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Semiconductor Group
2
12/05/1997
BSS 296
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
Tj
-55 ... + 150
°C
Storage temperature
Tstg
-55 ... + 150
Thermal resistance, chip to ambient air 1)
RthJA
≤ 125
K/W
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
Electrical Characteristics, at
Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
V(BR)DSS
100
-
-
V
Gate threshold voltage
VGS=VDS, ID = 1 mA
VGS(th)
0.8
1.4
2
Zero gate voltage drain current
VDS = 100 V, VGS = 0 V, Tj = 25 °C
VDS = 100 V, VGS = 0 V, Tj = 125 °C
VDS = 60 V, VGS = 0 V, Tj = 25 °C
IDSS
-
-
-
-
8
0.1
100
50
1
µA
nA
Gate-source leakage current
VGS = 20 V, VDS = 0 V
IGSS
-
10
100
nA
Drain-Source on-state resistance
VGS = 10 V, ID = 0.8 A
VGS = 4.5 V, ID = 0.8 A
RDS(on)
-
-
0.6
0.5
1.4
0.8


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