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BSS296 Datasheet(PDF) 5 Page - Siemens Semiconductor Group |
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BSS296 Datasheet(HTML) 5 Page - Siemens Semiconductor Group |
5 / 7 page ![]() Semiconductor Group 5 12/05/1997 BSS 296 Power dissipation P tot = ƒ(TA) 0 20 40 60 80 100 120 °C 160 T A 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 W 1.2 P tot Drain current I D = ƒ(TA) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 °C 160 T A 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 A 0.9 I D Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C Drain-source breakdown voltage V (BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 T j 90 92 94 96 98 100 102 104 106 108 110 112 114 116 V 120 V (BR)DSS |