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BSS295 Datasheet(PDF) 6 Page - Siemens Semiconductor Group

Part No. BSS295
Description  SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BSS295 Datasheet(HTML) 6 Page - Siemens Semiconductor Group

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Semiconductor Group
6
12/05/1997
BSS 295
Typ. output characteristics
I
D = ƒ(VDS)
parameter: tp = 80 µs , Tj = 25 °C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
5.0
V
DS
0.0
0.4
0.8
1.2
1.6
2.0
2.4
A
3.2
I
D
V
GS [V]
a
a
2.0
b
b
2.5
c
c
3.0
d
d
3.5
e
e
4.0
f
f
4.5
g
g
5.0
h
h
6.0
i
i
7.0
j
j
8.0
k
k
9.0
l
Ptot = 1W
l
10.0
Typ. drain-source on-resistance
R
DS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
0.0
0.4
0.8
1.2
1.6
2.0
A
2.8
I
D
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Ω
0.9
R
DS (on)
VGS [V] =
a
2.0
VGS [V] =
a
a
2.5
b
b
3.0
c
c
3.5
d
d
4.0
e
e
4.5
f
f
5.0
g
g
6.0
h
h
7.0
i
i
8.0
j
j
9.0
k
k
10.0
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 µs
VDS≥ 2 x ID x RDS(on)max
0
1
2
3
4
5
6
7
8
V
10
V
GS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
A
4.5
I
D
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
0.0
0.5
1.0
1.5
2.0
2.5
3.0
A
4.0
I
D
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
S
2.2
g
fs


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