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BSS110 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BSS110 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 7 page  Semiconductor Group 1 12/05/1997 BSS 110 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 Pin 2 Pin 3 S G D Type VDS ID RDS(on) Package Marking BSS 110 -50 V -0.17 A 10 Ω TO-92 SS 110 Type Ordering Code Tape and Reel Information BSS 110 Q62702-S500 E6288 BSS 110 Q62702-S278 E6296 BSS 110 Q67000-S568 E6325 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS -50 V Drain-gate voltage RGS = 20 kΩ V DGR -50 Gate source voltage VGS ± 20 Continuous drain current TA = 35 °C ID -0.17 A DC drain current, pulsed TA = 25 °C IDpuls -0.68 Power dissipation TA = 25 °C Ptot 0.63 W |
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Similar Description - BSS110 |
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