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BSP316 Datasheet(PDF) 6 Page - Siemens Semiconductor Group |
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BSP316 Datasheet(HTML) 6 Page - Siemens Semiconductor Group |
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Semiconductor Group 6 Sep-12-1996 BSP 316 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 0.0 -1.0 -2.0 -3.0 -4.0 V -6.0 V DS 0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 A -1.5 I D V GS [V] a a -2.0 b b -2.5 c c -3.0 d d -3.5 e e -4.0 f f -4.5 g g -5.0 h h -6.0 i i -7.0 j j -8.0 k k -9.0 l Ptot = 2W l -10.0 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 A -1.3 I D 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Ω 7.0 R DS (on) VGS [V] = a a -2.0 b b -2.5 c c -3.0 d d -3.5 e e -4.0 f f -4.5 g g -5.0 h h -6.0 i i -7.0 j j -8.0 k k -9.0 l l -10.0 Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs 0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 V GS 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2 -2.4 -2.6 A -3.0 I D Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 A -2.6 I D 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 S 0.75 g fs |
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