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BSP315 Datasheet(PDF) 3 Page - Siemens Semiconductor Group |
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BSP315 Datasheet(HTML) 3 Page - Siemens Semiconductor Group |
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Semiconductor Group 3 Sep-12-1996 BSP 315 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS≥ 2 * ID * RDS(on)max, ID = -1.1 A gfs 0.25 0.7 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Ciss - 300 400 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss - 150 230 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss - 85 130 Turn-on delay time VDD = -30 V, VGS = -10 V, ID = -0.29 A RGS = 50 Ω td(on) - 8 12 ns Rise time VDD = -30 V, VGS = -10 V, ID = -0.29 A RGS = 50 Ω tr - 35 55 Turn-off delay time VDD = -30 V, VGS = -10 V, ID = -0.29 A RGS = 50 Ω td(off) - 80 110 Fall time VDD = -30 V, VGS = -10 V, ID = -0.29 A RGS = 50 Ω tf - 140 190 |
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