BSP315 datasheet(6/9 Pages) SIEMENS

Part #	BSP315

Description	SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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6 / 9 page

Semiconductor Group

6

Sep-12-1996

BSP 315

Typ. output characteristics

ID = ƒ(VDS)

parameter:

tp = 80 µs

0.0

-1.0

-2.0

-3.0

-4.0

V

-6.0

V

DS

0.0

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

-1.4

-1.6

-1.8

-2.0

-2.2

A

-2.6

I

D

V

GS

[V]

a

a -2.0

b

b -2.5

c

c -3.0

d

d -3.5

e

e -4.0

f

-4.5

g

g -5.0

h

h -6.0

i

-7.0

j

-8.0

k

k -9.0

l

Ptot = 2W

l -10.0

Typ. drain-source on-resistance

RDS (on) = ƒ(ID)

parameter:

tp = 80 µs, Tj = 25 °C

0.0

-0.4

-0.8

-1.2

-1.6

A

-2.4

I

D

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

Ω

2.6

R

DS (on)

VGS [V] =

a

-2.0

VGS [V] =

a

-2.5

b

-3.0

c

-3.5

d

-4.0

e

-4.5

f

-5.0

g

-6.0

h

-7.0

i

-8.0

j

-9.0

k

-10.0

Typ. transfer characteristics

ID = f(VGS)

parameter:

tp = 80 µs

0

-1

-2

-3

-4

-5

-6

-7

-8

V

-10

V

GS

0.0

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

-3.5

-4.0

-4.5

-5.0

A

-6.0

I

D

Typ. forward transconductance

gfs = f (ID)

parameter:

tp = 80 µs,

0.0

-1.0

-2.0

-3.0

-4.0

A

-5.5

I

D

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

S

1.1

g

fs

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BSP315 Datasheet(PDF) 6 Page - Siemens Semiconductor Group

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