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UCC27423-Q1 Datasheet(PDF) 15 Page - Texas Instruments

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Part No. UCC27423-Q1
Description  DUAL 4-A HIGH-SPEED LOW-SIDE MOSFET DRIVERS WITH ENABLE
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Maker  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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UCC27423-Q1 Datasheet(HTML) 15 Page - Texas Instruments

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UCC27423
GND
1
2
3
4
INB
INA
7
6
5
8
OUTA
VDD
OUTB
INPUT
CER
AL EL
VDD
C2
C3
+
5.5 V
ENBB
ENBA
100
µF
1
µF
0.1
100
µF
1
µF
VSNS
VSUPPLY
RSNS
DSCHOTTKY
10
UCC27423
GND
1
2
3
4
INB
INA
7
6
5
8
OUTA
VDD
OUTB
INPUT
CER
AL EL
VDD
C2
C3
+
5.5 V
ENBB
ENBA
100
µF
1
µF
0.1
100
µF
1
µF
VSNS
DADJ
RSNS
DSCHOTTKY
10
UCC27423-Q1
UCC27424-Q1
UCC27425-Q1
www.ti.com
SGLS274D
– SEPTEMBER 2008 – REVISED AUGUST 2011
Two circuits are used to test the current capabilities of the UCC27423 driver. In each case external circuitry is
added to clamp the output near 5 V while the IC is sinking or sourcing current. An input pulse of 250 ns is
applied at a frequency of 1 kHz in the proper polarity for the respective test. In each test there is a transient
period where the current peaked up and then settled down to a steady-state value. The noted current
measurements are made at a time of 200 ns after the input pulse is applied, after the initial transient.
The circuit in Figure 29 is used to verify the current sink capability when the output of the driver is clamped
around 5 V, a typical value of gate-source voltage during the Miller plateau region. The UCC27423 is found to
sink 4.5 A at VDD = 15 V and 4.28 A at VDD = 12 V.
Figure 29. Current Sinking
The circuit shown in Figure 30 is used to test the current source capability with the output clamped to around 5 V
with a string of Zener diodes. The UCC27423 is found to source 4.8 A at VDD = 15 V and 3.7 A at VDD = 12 V.
Figure 30. Current Sourcing
The current sink capability is slightly stronger than the current source capability at lower VDD. This is due to the
differences in the structure of the bipolar-MOSFET power output section, where the current source is a
P-channel MOSFET and the current sink has an N-channel MOSFET.
In a large majority of applications it is advantageous that the turn-off capability of a driver is stronger than the
turn-on capability. This helps to ensure that the MOSFET is held OFF during common power supply transients
which may turn the device back ON.
Copyright
© 2008–2011, Texas Instruments Incorporated
15


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