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UCC27423-Q1 Datasheet(PDF) 4 Page - Texas Instruments

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Part No. UCC27423-Q1
Description  DUAL 4-A HIGH-SPEED LOW-SIDE MOSFET DRIVERS WITH ENABLE
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Maker  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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UCC27423-Q1 Datasheet(HTML) 4 Page - Texas Instruments

 
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UCC27423-Q1
UCC27424-Q1
UCC27425-Q1
SGLS274D
– SEPTEMBER 2008 – REVISED AUGUST 2011
www.ti.com
ELECTRICAL CHARACTERISTICS
VDD = 4.5 V to 15 V, TA = –40°C to 125°C, TA = TJ (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Input (INA, INB)
VIH
Logic 1 input threshold
2
V
VIL
Logic 0 input threshold
1
V
IIN
Input current
VIN = 0 V to VDD
–10
0
10
μA
Output (OUTA, OUTB)
IOUT
Output current
VDD = 14 V
(1) (2)
4
A
VOH
High-level output voltage
VOH = VDD – VOUT, IOUT = –10 mA, VDD = 14 V
330
450
mV
VOL
Low-level output voltage
IOUT = 10 mA, VDD = 14 V
22
40
mV
TA = 25°C, IOUT = –10 mA, VDD = 14 V
(3)
25
30
35
ROH
Output resistance high
TA = full range, IOUT = –10 mA, VDD = 14 V
(3)
18
45
TA = 25°C, IOUT = 10 mA, VDD = 14 V
(3)
1.9
2.2
2.5
ROL
Output resistance low
TA = full range, IOUT = 10 mA, VDD = 14 V
(3)
1.2
4
Latch-up protection(1)
500
mA
Switching Time
tr
Rise time (OUTA, OUTB)
CLOAD = 1.8 nF
(1)
20
40
ns
tf
Fall time (OUTA, OUTB)
CLOAD = 1.8 nF
(1)
15
40
ns
tD1
Delay time, IN rising (IN to OUT)
CLOAD = 1.8 nF
(1)
25
50
ns
UCC27423,
35
60
UCC27424
tD2
Delay time, IN falling (IN to OUT)
CLOAD = 1.8 nF
(1)
ns
UCC27425
35
70
Enable (ENBA, ENBB)
VIN_H
High-level input voltage
Low to high transition
1.7
2.4
2.9
V
VIN_L
Low-level input voltage
High to low transition
1.1
1.8
2.2
V
Hysteresis
0.15
0.55
0.90
V
RENBL Enable impedance
VDD = 14 V, ENBL = GND
75
100
145
k
tD3
Propagation delay time (see Figure 3)
CLOAD = 1.8 nF
(1) (4)
30
60
ns
tD4
Propagation delay time (see Figure 3)
CLOAD = 1.8 nF
(1) (4)
100
150
ns
(1)
Specified by design
(2)
The pullup/pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The pulsed output current rating is the
combined current from the bipolar and MOSFET transistors.
(3)
The pullup/pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The output resistance is the Rds(on) of the
MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor.
(4)
Not production tested
4
Copyright
© 2008–2011, Texas Instruments Incorporated


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